Low loss SOI-based high-mesa waveguides fabricated using neutral loop discharge (NLD) plasma etching for compact breath-sensing system

Satoshi Yano; Kosuke Kameyama; Kiichi Hamamoto

doi:10.1364/IPNRA.2007.IWA7

Integrated Photonics and Nanophotonics Research and Applications / Slow and Fast Light
OSA Technical Digest (CD) (Optica Publishing Group, 2007),
paper IWA7
•https://doi.org/10.1364/IPNRA.2007.IWA7

Low loss SOI-based high-mesa waveguides fabricated using neutral loop discharge (NLD) plasma etching for compact breath-sensing system

Satoshi Yano, Kosuke Kameyama, and Kiichi Hamamoto

Integrated Photonics and Nanophotonics Research and Applications 2007

Salt Lake City, Utah United States
8–11 July 2007
ISBN: 1-55752-844-6

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Integrated Optical Sensors (IWA)

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S. Yano, K. Kameyama, and K. Hamamoto, "Low loss SOI-based high-mesa waveguides fabricated using neutral loop discharge (NLD) plasma etching for compact breath-sensing system," in Integrated Photonics and Nanophotonics Research and Applications / Slow and Fast Light, OSA Technical Digest (CD) (Optica Publishing Group, 2007), paper IWA7.

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Abstract

SOI-based Si/SiO₂ high-mesa waveguide has been fabricated by using neutral loop discharge (NLD) plasma etching. Significant loss reduction of about 50%, resulted in 0.3dB/cm propagation loss, has been achieved.

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