Abstract

Recently, we introduced a new technique of fabricating optical waveguides with lateral optical confinement by first preferentially etching the waveguide channels in silicon substrate, and then filling the grooves with organic films by solution-deposition technique after a layer of SiO₂ film was thermally grown as the optical insulating layer.¹ We have extended the same concept of waveguide-formation to GaAs - Ga_1-xAl_xAs system by liquid-phase epitaxial technique.² In this case, the waveguide channels were preferentially etched into the GaAs substrates, and then a layer of Ga_0.7Al_0.3As was grown on top of it followed by a second layer of GaAs. The GaAs layer serves as the light-guiding film, while the Ga_0.7Al_0.3As layer serves as the optical insulating layer.

© 1976 Optical Society of America