Abstract

It has been shown that certain crystalline organic semiconductors such as 3,4,9,10 perylenetetracarboxylic dianhydride (PTCDA) form rectifying energy bariers¹ when deposited onto inorganic semiconductor substrates; for example, Si, GaAs and InP. The organic-on-inorganic semiconductor (OI) heterostructure devices are particularly useful in fabricating many novel devices such as organic-on-inorganic semiconductor transistors² due to the low reverse leakage current. The high index of refraction and high transmittance in the organic material also enable them to be used for optoelectronic device applications such as optical waveguides and photodetectors. In particular, since PTCDA is transparent in the infrared region it is very useful for waveguide, and various other optoelectronic device applications.

© 1988 Optical Society of America