Abstract

Semiconductor lasers are small-sized, high-efficiency light sources which can be modulated up to a few GHz by current injection. They have been finding practical uses in various fields as the result of recent major improvements in reliability and mode stabilization. In order to take maximum advantage of direct highspeed modulation capabilities, GaAs Schottky-gate FETs have been successfully used as driver-transistors.¹⁾ The high cut-off frequency of GaAS FETs, typically 20-30 GHz for 1 µm gate lengths, makes it easy to realize few-Gb/s light sources usable for high-speed optical fiber communications.

© 1980 Optical Society of America