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Photoluminescence Studies of Ga(As,P) Strained-Layer Superlattices

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Abstract

Semiconductor Strained-Layer Superlattices (SLS’s) are composed of thin (few hundred Å) alternating layers of lattice-mismatched materials that grow in a coherently strained condition which avoids the formation of misfit dislocations.1 The growth of SLS's permits the freedom to combine lattice-mismatched semiconducting materials in a superlattice structure. These SLS's form a new class of semiconductors with useful and tailorable electronic properties.2

© 1984 Optical Society of America

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