Abstract

Quantum-dot based devices have the potential to enable high-speed, low power, and efficient optical interconnect fabrics for silicon chips. Epitaxial quantum dots are composed of nanometer-scale sized low band gap media embedded in a matrix of high band gap semiconductor. These nanoscale objects exhibit unique properties, some of which are atomic-like. Several are predicted to be useful for improved or novel optical devices. The three-dimensional carrier confinement, for example, has led to a demonstration of low-threshold lasers with high differential gain and low chirp— characteristics that are useful for high-speed modulation and therefore desirable for high bandwidth interconnections. Other optical devices that have been demonstrated include optical amplifiers, modulators, and near- and far-infrared detectors. These components are basic to any optical interconnect schemes that could potentially be integrated with silicon chips.

© 2005 Optical Society of America