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An InGaAsP/InP Integration Platform with Low Loss Deeply Etched Waveguides and Record SOA RF-linearity

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Abstract

We present a novel InGaAsP/InP integration platform that simultaneously achieves high saturation power and low deeply etched waveguide loss, while requiring only a single blanket regrowth. RF-linearity of SOAs was characterized with record performance.

© 2011 Optical Society of America

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