Abstract

The results of diamond film depositions based on a closed hot filament chemical vapor deposition (HFCVD) system are given. In this process, no flowing feed gases are used; only a small amount of hydrogen and a solid graphite source are used. Typical deposition conditions are: nominal filament temperature, 1800 °C; nominal substrate temperature, 750 °C; deposition chamber pressure, 1.3 kPa to 10.6 kPa (10 torr to 80 torr); filament-substrate spacing, 4 mm; filament-graphite rod spacing, 7 mm to 20 mm. Growth rates of 0.1 µm/h to 0.3 µm/h were achieved. The presence of the diamond phase was verified by x-ray diffraction (XRD) and Raman spectroscopy.

© 1995 Optical Society of America