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1D Photonic-Crystal Laser with Laterally-Current-Injected Ultrasmall Buried Active Region on SiO2/Si Substrate

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Abstract

One-dimensional photonic-crystal lasers with 2.5-μm-long buried active regions are fabricated on SiO2/Si substrate. The rib-shaped structure enables lateral-current-injection, high-Q cavity, and strong optical confinement. The device exhibits 13.0-μA threshold current and 28.0% external differential-quantum-efficiency.

© 2023 The Author(s)

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