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Electrical switching of Ge2Sb2Te5 memory cells based on silicon photonic waveguide microheaters

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Abstract

We demonstrate binary and multilevel electrical programming of the phase change material Ge2Sb2Te5 (GST) memory cells based on ion-implanted silicon-on-insulator (SOI) waveguide microheaters. GST cells can be reversibly switched by using low-amplitude electric pulses.

© 2022 The Author(s)

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