Abstract
We report a novel silicon MZI switch activated by the phase change of a sub-micrometer-size Ge2Sb2Te5 (GST) thin film. The phase change of GST is triggered by electrical pulses, leading to two “self-holding” switching states. Extinction ratio change of 5-dB is measured from the MZI spectrum.
© 2017 Optical Society of America
PDF ArticleMore Like This
Jagriti Ahuja, Shubham Singh, Nadir Ali, and Rajesh Kumar
JW4A.76 Information Storage System and Technology (ISST) 2019
Takumi Moriyama, Hitoshi Kawashima, Masashi Kuwahara, Xiaomin Wang, Hideaki Asakura, and Hiroyuki Tsuda
Tu3E.4 Optical Fiber Communication Conference (OFC) 2014
Chulsoo Choi, Sun-Je Kim, and Byoungho Lee
s2377 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2017