Abstract

We studied an Ar-implantation-induced quantum dot intermixing (QDI) technique and its physical mechanism, and demonstrate an almost equal performance of the QDI used 120 nm shifted laser diode compared to the performance without the technique.

© 2016 Optical Society of America

PDF Article
More Like This
Theoretical and experimental analysis on Ar Implantation-Induced Quantum Dot Intermixing for 1550 nm-Band Photonic Integrated Circuit

A. Matsumoto, Y. Akashi, S. Isawa, T. Umezawa, Y. Matsushima, and K. Utaka
JTh2A.71 CLEO: Applications and Technology (CLEO_AT) 2019

Thermally Stable Ar-Implantation-Induced Intermixed Quantum Dot Laser Diode in High-Temperature Region

A. Matsumoto, K. Akahane, S. Matsui, Y. Akashi, T. Umezawa, N. Yamamoto, Y. Matsushima, H. Ishikawa, and K. Utaka
CB_4_5 The European Conference on Lasers and Electro-Optics (CLEO_Europe) 2017

Evaluation of Lasing Temperature Characteristics of 1550nm QD-based-LDs by IID-QDI Technique with Ar and B Ions and High Temperature Stability

A. Matsumoto, S. Isawa, R. Kaneko, K. Akahane, T. Umezawa, Y. Matsushima, and K. Utaka
JTh2D.6 CLEO: Applications and Technology (CLEO_AT) 2020

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription