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Conferences > CLEO_SI > 2016 > SM4R > SM4R.6

Efficient Electroluminescence from III/V Quantum-Well-in-Nanopillar Light Emitting Diodes Directly Grown on Silicon

Indrasen Bhattacharya, Saniya Deshpande, Gilliard N Malheiros-Silveira, and Connie Chang-Hasnain

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Abstract

We have grown and fabricated InGaAs active region, InP clad nanopillar diodes at deterministic positions on silicon using selective area epitaxy. Room temperature radiative dominant electroluminescence at 1460 nm wavelength is reported from these devices.

© 2016 Optical Society of America

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