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Room Temperature CW 1.3 μm Single Mode Lasing of InAs Quantum Dot Micro-disk Lasers Grown on (001) Si

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Abstract

Heteroepitaxially grown InAs quantum dot micro-disk lasers were demonstrated on planar Si (001) substrates. Room-temperature continuous-wave lasing at 1.3 μm with a threshold pump power of 250 μW was achieved for a 4 µm disk.

© 2016 Optical Society of America

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