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Fully CMOS-Compatible Integrated Distributed Feedback Laser with 250 °C Fabricated Al2O3:Er3+ Gain Medium

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Abstract

We demonstrate a DFB laser with a record low temperature (250 °C) fabrication process of low-loss (<0.1 dB/cm) amorphous Al2O3:Er3+ gain medium by utilizing the substrate bias, facilitating laser integration in a fully CMOS-compatible platform.

© 2016 Optical Society of America

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