Abstract

High density carrier dynamics in semiconductors have been investigated with mid infrared spectroscopy, where plasma frequencies of photoexcited carriers usually are located. However, in the low excitation limit, plasma frequencies appear in the terahertz region. Hence, detailed measurements in the intermediate frequency region with continuous probes have been required for the full understanding of optical responses in condensed matter. In this paper, utilizing air plasma based time domain spectroscopy [1], we carry out time resolved measurements in a semiconductor of indium antimonide (InSb), in which the mobility of electrons strongly depends on carrier density.

© 2015 IEEE