Abstract

Optically pumped semiconductor disk lasers (OPSDLs) combine the unique features of high output power, excellent beam quality, and wide wavelength coverage. In the fundamental regime, the wavelengths of these sources can be continuously addressed from 0.65 μm to 2.5 μm by choosing an appropriate material system. This wavelength band is essentially increased by generation of higher harmonics, thus, the shorter visible spectrum as well as the ultra-violet can be accessed. Additionally, the output power is in the watt-level for most of these wavelengths [1] at a rather high brilliance. Frequency down conversion (Raman shifting) can be employed to extend the range of well-established near infra-red semiconductor material systems such as GaAs-InGaAs [2].

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