We review our results concerning the development of Semiconductor Disk Lasers with emission wavelength in the range of 1100–1200 nm. In particular, we highlight our recent demonstrations of SDLs with an output power of more than 20 W for emission around 1180 nm and corresponding frequency doubled power of more than 10 W at around 589 nm. The SDL gain chips utilize either dilute nitride (GaInNAs) or low-temperature GaInAs quantum wells.

© 2013 IEICE

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