Abstract
Semiconductor lasers based on self-assembled quantum dots (QD) attract significant attention due to improvement in lasing threshold, modulation bandwidth, relative intensity noise, as well as due to reduction of chirp, temperature sensitivity and sensitivity to optical feedback at telecom wavelengths. The advantages of QD material can be exploited in multisection mode-locked (ML) lasers which are able to generate high-intensity sub-picosecond pulses [1].
© 2009 IEEE
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