High-Power Quantum Dot Based Semiconductor Disk Laser

M. Butkus; K. G. Wilcox; J. Rautiainen; O. G. Okhotnikov; S. S. Mikhrin; I. L. Krestnikov; A. R. Kovsh; M. Hoffmann; T. Sudmeyer; U. Keller; E. U. Rafailov

CLEO/Europe and EQEC 2009 Conference Digest
(Optica Publishing Group, 2009),
paper CB5_1

High-Power Quantum Dot Based Semiconductor Disk Laser

M. Butkus, K. G. Wilcox, J. Rautiainen, O. G. Okhotnikov, S. S. Mikhrin, I. L. Krestnikov, A. R. Kovsh, M. Hoffmann, T. Sudmeyer, U. Keller, and E. U. Rafailov

The European Conference on Lasers and Electro-Optics 2009

Munich Germany
14–19 June 2009
ISBN: 978-1-4244-4080-1

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Semiconductor Disk Lasers (CB5)

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M. Butkus, K. G. Wilcox, J. Rautiainen, O. G. Okhotnikov, S. S. Mikhrin, I. L. Krestnikov, A. R. Kovsh, M. Hoffmann, T. Sudmeyer, U. Keller, and E. U. Rafailov, "High-Power Quantum Dot Based Semiconductor Disk Laser," in CLEO/Europe and EQEC 2009 Conference Digest, (Optica Publishing Group, 2009), paper CB5_1.

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Abstract

Semiconductor disk lasers (SDLs), also referred to as vertical external cavity surface emitting lasers (VECSELs), offer an effective solution for combining high output power with high beam quality, from a power scalable semiconductor laser [1]. The first SDLs based on InAs/GaAs sub monolayer (SML) and InGaAs Stranski-Krastanow (SK) grown quantum dot (QD) gain material were recently demonstrated, with output power of 1.4 W and 0.3 W respectively [2,3]. Here, we report the first multi-Watt cw output from a QD SDL.

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