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Optica Publishing Group
  • Conference on Lasers and Electro-Optics Europe
  • Technical Digest Series (Optica Publishing Group, 2000),
  • paper CTuK55

Microchip lasers based on Nd:Ca4GdO(BO3)3

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Abstract

The Nd3+:Ca4GdO(BO3)3 crystal (Nd:GdCOB) has already been demonstrated to be efficient for self­frequency doubling [1] : 115 mW in the green have been obtained from a diode-pumped Nd:GdCOB crystal placed in a concave-concave cavity. We have also reported on the performances of diode-pumped Nd:GdCOB crystals put in a short plano-plano cavity consisting of a Nd:GdCOB crystal with antireflection coating and two plan mirrors put very closed to the crystal. An output power of 160 mW have been obtained in the infrared for a pump diode emitting 2 W on an area of 1 μm by 100 μm [2]. Moreover, we have obtained a power 22 mW in the green in a self frequency doubling configuration from a crystal cut for type I phase-matching in the XY plane (θ = 90°, ϕ = 46°) and placed between two plane mirrors highly reflecting in the infrared.

© 2000 IEEE

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