Low threshold GaAsSb/GaAs broad area laser diodes emitting at 1220 nm

J. Joos; I Ecker; K J. Ebeling

Conference on Lasers and Electro-Optics Europe
Technical Digest Series (Optica Publishing Group, 2000),
paper CML1

Low threshold GaAsSb/GaAs broad area laser diodes emitting at 1220 nm

J. Joos, I Ecker, and K J. Ebeling

The European Conference on Lasers and Electro-Optics 2000

Nice France
10–15 September 2000
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Long Wavelength Diode Lasers (CML)

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J. Joos, I. Ecker, and K. J. Ebeling, "Low threshold GaAsSb/GaAs broad area laser diodes emitting at 1220 nm," in Conference on Lasers and Electro-Optics Europe, Technical Digest Series (Optica Publishing Group, 2000), paper CML1.

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Abstract

GaAs-based laser diodes emitting around 1 3 µm have gained tremendous interest, not only because they are suitable sources for low dispersion optical fiber transmission, but rather due to the prospect of using their active material in vertical-cavity lasers (VCSELs) [1]

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