Abstract

Pulsed laser ablation and reactive pulsed laser ablation are the most suitable and efficient techniques, among various thin film deposition techniques known nowadays, for the formation of high quality ceramic films (nitrides, carbides, silicides…) [1]. The main parameters determining the composition, the structure and the morphology of the deposited films are the pulse duration and the laser power density, the pressure and the type of reactive gas, the substrate temperature, the deposition geometry and the target-substrate distance [2]. With the same parameters, deposition rate and film thickness can be also controlled.

© 2000 IEEE