Abstract

Periodically domain-inverted GaAs crystals for quasi phase matched (QPM) devices have attract much attention because the large optical nonlinearity of GaAs crystals, e.g. d₃₆(GaAs) = 170 pm/V at 1.064 μm, will offer high conversion efficiency. Periodically domain-inverted AlGaAs waveguides based on wafer bonding followed by overgrowth have been reported. We have proposed and demonstrated an alternative way, sublattice reversal epitaxy, to fabricate domain-inverted Structures in the GaAs/Si/GaAs (100) system. Much higher qualities of domain-inverted GaAs epitaxial films can be grown by sublattice reversal epitaxy in the lattice-matched GaAs/Ge/GaAs (100) systems and GaAs overgrowth on the periodically patterned template allows us to attain periodical domain inversion in GaAs crystals.[1][2]

© 2000 IEEE