Abstract

GaP is an attractive material for quadratic nonlinear optical devices because of its large nonlinearity (d₁₄= 71 pm/V at 1.064 μm), wide transparency range in infrared region (0.6 - 12 μm), high thermal conductivity and potential for monolithic integration with electronic/photonic semiconductor devices. Very small two-photon absorption coefficient (0.01 cm/GW at 1.064 μm) compared to that of GaAs (25 cm/GW at 1.064 μm) will open up high-power applications in the near infrared region. To achieve quasi phase matching (QPM) indispensable for isotropic nonlinear optical materials, it is essential to fabricate periodic spatially-inverted crystals. To fabricate inverted crystals, we have developed an epitaxial growth technique, sublattice reversal epitaxy, for growing inverted III-V semiconductors by inserting a thin intennediate layer of group-IV atoms [1], We have shown that sublattice reversal (i.e. spatial inversion) at GaAs can be achieved and fabricated QPM AlGaAs waveguiding devices [2], In this paper, the first successful sublattice reversal achieved for GaP is reported.

© 2007 IEEE