Abstract

We carried out growth, fabrication, as well as characterization and modeling of InGaAsP/InP lasers with 9 QW active region and different p-doping profiles within the temperature range of 10 - 80 °C and the range of injection current densities up to 10 kA/cm². Measurements of the threshold current, external efficiency, and optical loss were carried out for broad area and capped mesa buried heterostructure devices. We used broad area devices with electron collector on the top of p-contact for leakage measurements [1] and a modified Andrekson technique to measure optical loss. For simulation we used “Padre” program based on drift-diffusion approximation. Experiment shows that for devices with moderately doped SCH, the threshold current at room temperature reaches the value of 115 A/cm² per QW and T₀ = 64K (Fig.1).

© 1998 IEEE