Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Basic Design Rule of 1.3-μm InP-Based Strained MQW Lasers for High Temperature Operation

Not Accessible

Your library or personal account may give you access

Abstract

Basic design rule for highly-efficient operation of 1.3-μm InP-based strained MQW lasers at elevated temperatures is derived on the basis of a self-consistent numerical approach. The validity of the design rule is experimentally demonstrated by the excellent performance (η=0.55 W/A and Pmax > 35 mW at 363 K) of fabricated lasers.

© 1995 Optical Society of America

PDF Article
More Like This
Theoretical and Experimental Study on the Temperature Sensitivity of High-Efficiency 1.3-μm InP-Based Strained MQW Lasers

S. Seki, H. Oohasi, H. Sugiura, T. Hirono, and K. Yokoyama
WA.3 Semiconductor Lasers: Advanced Devices and Applications (ASLA) 1995

High-power, high-efficiency, highly uniform 1.3-μm InGaAsP/InP strained MQW lasers

K. Kojima
ThG3 Optical Fiber Communication Conference (OFC) 1995

Design pinciples for high-performance InP-based strained-layer quantum-well lasers

Shunji Seki
IFF3 Integrated Photonics Research (IPR) 1995

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.