Abstract

Intersubband semiconductor lasers have attracted considerable attention following the development by Faist, Capasso et al of Mid-Infra-Red (MIR) Quantum Cascade lasers. Quite considerable progress has subsequently been made in improving the performance of those devices and work has been undertaken to assess the operating characteristics and specifically including the direct current modulation capabilities of such lasers [1]. More recently a self-consistent analysis of the laser dynamics was undertaken using calculated carrier lifetimes and optical gain in these devices[2].

© 1998 IEEE