Abstract

The near infra-red wavelengths of 800 to 850nm are important because of the diversity of compatible modulators and detectors which can be produced in both Si and GaAs based materials and the ease of integration with driving and amplification circuitry. GaAs and Si based circuits can allow very high speed operation and low noise figures of complex circuitry. Thus 850nm laser sources are important for developing highly parallel interconnections over short distances (several cms to several tens of metres).

© 1996 Optical Society of America