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Diode-pumped, external-cavity GaAs/AlGaAs surface emitting laser

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Abstract

Surface emitting lasers with high output power in a single transverse mode have much potential for applications in optical communications, laser printing and optical data storage. However, single transverse mode VCSEL’s have been limited to 1-5mW and although large aperture VCSEL’s can provide high power they are highly multimode. Optically pumped external-cavity surface emitting lasers1,2 can overcome this limitation because the active region is defined by the shape of the pumping beam which can be matched by the external cavity mode to promote oscillation in a single transverse mode. Furthermore, by operating in an external cavity, various optical elements can be introduced to control the nature of the laser output, e.g. stable, tunable, single frequency- or mode-locked-operation. In this paper we report the initial development and characterisation of diode-pumped, external-cavity GaAs/AlGaAs surface emitting lasers.

© 1998 IEEE

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