Abstract

Laser annealing of semiconductor layers by irradiation directed to the backside of the substrate is promising technique for modification of implanted layers and semiconductor structures. This technique allows to recrystallize the buried layers without disruption of the surface. However, the using of the industrial lasers with λ=1.06 µm for the backside annealing of silicon structures is ineffective, due to the screening of the powerful irradiation by the silicon substrate.

© 1998 IEEE