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High-power operation of strained GaInP/AlGaInP quantum well laser diodes grown by solid source molecular beam epitaxy

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Abstract

High power 600-nm-range AlGaInP-based laser diodes are attractive light sources for various applications, such as photodynamic therapy, optical pumping of tunable solid-state lasers, projection displays, bar-code readers, and high speed printers. The reliability of AlGaInP-based lasers has been a widely debated issue lately. In order to achieve reliable high-power operation of lasers in the red, low-threshold and high efficiency operation should be established. This could be achieved by using strained active regions and by optimizing the growth conditions for the laser material. In addition, proper laser structure design and facet coating procedures are indispensable to increase the maximum usable output power before the catastrophic optical damage takes place.

© 1998 IEEE

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