Abstract

Key factors determining the speed of QW lasers are total carrier capture time and the ratio of the capture to escape times [1]. Usually these transport parameters are calculated under flat band conditions [2]. However, the accumulation of positive charge in QW region of InGaAs/InGaAsP lasers gives rise to significant modification of conduction and valence band profiles [3]. In this report we present the results of self-consistent calculations of effective electron capture and escape times in SCH InGaAs/InGaAsP QW laser structures taking into account band bending effects. We show that these lime constants are strongly affected by new intersubband transitions involved in capture processes due to appearance of new bound electron states in the presence of space charge.

© 1996 IEEE