Abstract

With the current trend towards optical communication, and for an effective penetration of the optical technology in the public networks, there is a particular interest in fabricating low-cost active and passive devices. Over the past years, III-V semiconductor-based opto-electronic devices have been investigated intensively as individual structures and their characteristics have attained a high performance level. However, their implementation in the public networks up to the subscribers is still impeded by their high cost level. Monolithic integrated optical devices made by planar techniques are suitable for mass production and have a strong potential for lower price: with added components defined by conventional microlithography rather by assembly, additional functionality can be obtained at minimum extra cost.

© 1996 IEEE