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Conferences > CLEO_Europe > 1996 > CThI > CThI32

Reduction of nonradiative current by sulphur passivation of InGaAs/AlGaAs laser diode facets

J. Sebastian, G. Beister, O. P. Daga, D. Gutsche, G. Erbert, J. Maege, P. Ressei, L. Weixelbaum, and M. Weyers

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Abstract

For InGaAs/AlGaAs laser diodes catastrophic optical damage (COD) is the main factor limiting the output power. We have developed both an effective passivation method for such laser diodes on the basis of wet chemical sulphur treatment, and a non-destructive method to study the associated changes in the nonradiative surface recombination at the facets. This method is based on an analysis of power-voltage-current characteristics (P-V-I) in the low injection regime.

© 1996 IEEE

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