Abstract
Al-free diode lasers,1-5 emitting at wavelengths between 0.78 µm to 0.98 µm, have been the subject of recent studies due to several advantages over Al-containing laser structures: ease of regrowth for complex index-guided, high-coherent- power structures;2-5 very low series resistance;5 and relatively low facet-temperature rise1 (λ = 0.81 µm). We have recently shown,5 for diodes emitting in the 0.94-0.98-µm region, that the use of high-bandgap (1.62 eV) InGaAsP confinement layers coupled with a double-quantum-well structure provides relatively temperature-insensitive electro-optical characteristics, thus leading to high cw powers (1.5 W/facet) from 100-µm-stripe uncoated diodes.
© 1996 Optical Society of America
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