Abstract

The main applications of mid-infrared diode lasers are high-resolution molecular spectroscopy and gas pollutant detection. III-V semiconductor lasers based on InAs alloys are of great interest for the spectral range 3-4 µm. However, there are some reasons limiting high temperature operation of III-V mid-infrared lasers. Main of them is non-radiative Auger-recombination that influence strongly temperature dependence of threshold current, especially in narrow-gap semiconductors. Last year some novel physical approaches have been proposed to overcome Auger-recombination problem including non-traditional structures (type II superlattices, quantum cascade laser).

© 1996 IEEE