Abstract

Recently we have proposed and demonstrated a novel tunnel-injection mid-IR laser based on type II broken-gap p-Ga-InAsSb/p-InAs heterostructure placed in active layer.¹ The main feature of this device was the lasing provided by tunnel injection of electrons and their radiative recombination with holes at the interface. Such designing allowed us to suppress nonradiative Auger-recombination process, to reduce temperature dependence of the threshold current, and to increase characteristic temperature up to T₀ = 40-60 K in the range 80-110 K. The laser wavelength and threshold current density were 3.26 µm and 2 kA/cm² respectively at 77 K.

© 1996 Optical Society of America