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Transverse mode characteristics in amorphous-GaAs-antiguided vertical-cavity surface-emitting lasers

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Abstract

Stable single-mode emission of vertical-cavity surface-emitting lasers (VCSELs) is one of the imperative characteristics for application to optical computing and fiber communication. Several attempts have been reported to stabilize transverse mode emission for VCSEL.1,2 In this work, transverse mode characteristics for an antiguided VCSEL structure using amorphous-GaAs (a-GaAs) clad with high refractive index have been investigated. For 10 μm-diameter device, we observed stable transverse mode emission, indicating the effective antiguiding of high order transverse mode in the a-GaAs clad. Using a finite difference beam propagation method, we studied the transverse field profiles of the antiguided stnicture and the effects of mirror loss at the transverse mode.

© 1996 IEEE

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