Abstract
The modulation of laser diodes emitting at 1.55 μm has become very important for high bit rate lightwave communications. Both carrier density and carrier temperature determine the optical performance of the diode. Since thermalization of hot carriers takes place on a pico second timescale, exploring carrier heating for achieving giga Hertz modulation of the optical output has a very high potential. Recently this idea has been established in some numerical simulations [1].
© 1996 IEEE
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