Abstract

Light-induced refractive index changes in photorefractive semiconductors have become comparable with those in the photorefractive oxides with the help of electric field enhancement, resonance excitation as well as exploitation of the electrorefraction. The two-wave mixing gain coefficient in InP has reached the values higher than 30 cm^-1 at 970 nm.¹ As a benefit from such strong beam couplings self-organization effects like beam fanning, photorefractive oscillation, double-phase conjugation, and self-pumped phase conjugation can be achieved in semiconductors. In this presentation we report the experimental investigation on such self-starting (or self-organization) effects in InP:Fe at 1.06 μm with an applied dc-electric field.

© 1994 IEEE