Abstract
We have previously shown1 that InP, GaAs, and CdTe are promising materials for photorefractive applications in the near-IR spectrum. While the photorefractive sensitivity of these compound semiconductors is comparable with or greater than that of ferroelectric oxides which operate at visible wavelengths, the maximum refractive-index changes achievable are considerably smaller than materials such as BaTiO3. This has prohibited the application of semiconductors as self-pumped phase conjugate reflectors and image amplifiers.
© 1988 Optical Society of America
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