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Conferences > CLEO_Europe > 1994 > CThM > CThM6

Refractive index changes of low temperature grown GaAs depending on its annealing history

S. U. Dankowski, P. Kiesel, U. D. Keil, D. R. Dykaar, M. Kneissl, B. Knüpfer, R. F. Kopf, and G. H. Döhler

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Abstract

GaAs grown at low temperatures (LT-GaAs, 210°C-250°C) is known to exhibit very short carrier lifetimes (<1 ps)1,2 and semi-insulating behaviour after annealing (≈550°C). Therefore, this material is very appealing for both fabrication of excellent insulating layers in FETs and for extremely fast photoconductors.

© 1994 IEEE

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