Two-photon absorption coefficient and refractive-index changes in low-temperature-grown GaAs

Hany S. Loka; Seldon D. Benjamin; Peter W.E. Smith

Conference on Lasers and Electro-Optics
(Optica Publishing Group, 1998),
paper CFJ4

Two-photon absorption coefficient and refractive-index changes in low-temperature-grown GaAs

Hany S. Loka, Seldon D. Benjamin, and Peter W.E. Smith

Conference on Lasers and Electro-Optics 1998

San Francisco, California United States
3–8 May 1998
ISBN: 1-55752-540-4

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Ultrafast Measurement Techniques (CFJ)

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H. S. Loka, S. D. Benjamin, and P. W. E. Smith, "Two-photon absorption coefficient and refractive-index changes in low-temperature-grown GaAs," in Conference on Lasers and Electro-Optics, D. Scifres and A. Weiner, eds., (Optica Publishing Group, 1998), paper CFJ4.

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Abstract

Low-temperature-grown GaAs (LT-GaAs) contains excess As creating a high density of midgap states, which can reduce the carrier lifetime to less than a picosecond.¹

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