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Conferences > CLEOPR > 2015 > 28C2 > 28C2_2
  • 2015 Conference on Lasers and Electro-Optics Pacific Rim
  • (Optica Publishing Group, 2015),
  • paper 28C2_2

Extremely low-resistivity and high-carrier-concentration Si-doped AlGaN with low AlN molar fraction for improvement of wall plug efficiency of nitride-based LED

Motoaki Iwaya, Daisuke Iida, Kunihiro Takeda, Toru Sugiyama, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki

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Abstract

We discovered that Si-doped AlGaN with low AlN molar fraction have been used to realize an external low-resistivity n-layer at room temperature. This Si-doped n-Al0.05Ga0.95N underlying layer is extremely useful for the realization of high-performance nitride-based light emitting diodes. We also confirmed a reduction in the differential resistance of a violet light-emitting diode by using this n-AlGaN.

© 2015 IEEE

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