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  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper CMEE1
  • https://doi.org/10.1364/CLEO.2009.CMEE1

Recent Progresses of AlGaN and InAlGaN-based Deep-UV LEDs

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Abstract

We demonstrated 222-282 nm AlGaN and InAlGaN-based efficient deep-ultraviolet (DUV) light-emitting diodes (LEDs) fabricated on low threading dislocation density (TDD) AlN. We achieved over 10 mW CW UV output power for 264-282 nm LEDs.

© 2009 Optical Society of America

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