Abstract
3D Numerical modeling for carrier transport in the EBL and InGaN quantum well by considering the random alloy fluctuation have been done. The result shows that percolative transport should be the dominant transport mechanism in the light emitting diode and affects the efficiency droop.
© 2015 IEEE
PDF ArticleMore Like This
Yuh-Renn Wu, Chang-Pei Wang, Kuang-Chung Wang, and James S. Speck
JTh2A.72 CLEO: Applications and Technology (CLEO:A&T) 2012
Quoc-Hung Pham, Farn-Shiun Hwu, Huy-Bich Nguyen, and Jyh-Chen Chen
DM2D.2 Solid-State and Organic Lighting (SOLED) 2015
Guangyu Liu, Hongping Zhao, Jing Zhang, and Nelson Tansu
CMEE6 CLEO: Science and Innovations (CLEO:S&I) 2011