Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > SOLED > 2015 > DM2D > DM2D.2

Effect of polarization on the efficiency droop of InGaN/GaN single quantum well LED chips

Quoc-Hung Pham, Farn-Shiun Hwu, Huy-Bich Nguyen, and Jyh-Chen Chen

Not Accessible

Your library or personal account may give you access

Abstract

A numerical simulation is performed to study the electrical, thermal behaviors of InGaN/ GaN single quantum well LEDs. The carrier drift-diffusion model is used to investigate the effect of polarization on the efficiency droop.

© 2015 Optical Society of America

PDF Article
More Like This
Effect of temperature-dependent carrier recombination on the efficiency droop in InGaN/GaN single quantum well (SWQ) light emitting diode (LED) chips

Quoc-Hung Pham, Jyh-Chen Chen, Farn-Shiun Hwu, and Huy-Bich Nguyen
JW4A.7 Fourier Transform Spectroscopy (FTS) 2016

Effect of InGaN/GaN Multiple Quantum Wells with p-n Quantum Barriers on Efficiency Droop in Blue Light-emitting Diodes

Sheng-Wen Wang, Da-Wei Lin, Chia-Yu Lee, Che-Yu Liu, Yu-Pin Lan, Hao-Chung Kuo, and Shing-Chung Wang
JW2A.94 CLEO: Applications and Technology (CLEO:A&T) 2013

Efficiency Droop Reduction in InGaN/GaN Light-emitting Diodes by Graded-thickness Multiple Quantum Wells

C. H. Wang, W. T. Chang, S. P. Chang, J. C. Li, H. C. Kuo, T. C. Lu, and S. C. Wang
CWF4 CLEO: Science and Innovations (CLEO:S&I) 2011

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use