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Low Breakdown Voltage Silicon Avalanche Photodetector Implemented by Interdigitated p-i-n junctions

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Abstract

We report a silicon avalanche photodetector with low breakdown voltage of -6.44V. Through a design of narrow interdigitated junction spacing and Ni-silicide process, a high avalanche gain of 30 and low dark current are achieved.

© 2012 Optical Society of America

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