Abstract
J-shape ridge waveguide with trench for superluminescent diode using InAs/InGaAs quantum-dot active layer was designed and fabricated. The following performance was realized under CW operation: above 80 mW output power at 900 mA, and about 45 nm 3-dB spectral bandwidth.
© 2007 IEEE
PDF ArticleMore Like This
Mariangela Gioannini and Ivo Montrosset
CB_8 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2007
Long Wang, Qi Wang, Hao Liu, Guang Yang, Kai Liu, and Xiaomin Ren
S3J.5 Asia Communications and Photonics Conference (ACP) 2018
C. Y. Ngo, S. F. Yoon, W. J. Fan, and S. J. Chua
ThP_028 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2007